ssf 6072g5 ? silikron semicondu ctor co.,ltd. 201 2 . 11 . 1 3 version : 1. 1 page 1 of 8 www.silikron.com main product characteristics: features and benefits: description: a bsolute max rating: symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 4 a i d @ tc = 100c continuous drain current, v gs @ 10v 3 i dm pulsed drain current 16 p d @tc = 25c power dissipation 3.3 w v ds drain - source volt age 60 v v gs gate - to - source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 15 mj i a s avalanche current @ l=0.3mh 10 a t j t stg operating junction and storage temperature range - 55 to + 1 75 c thermal resistance symbol characterizes typ. ma x. units r ja junction - to - ambient ( t 10s) 38 /w junction - to - ambient (pcb mounted, steady - state) 35 /w v dss 60 v r ds (on) 67 m (typ.) i d 4 a sot - 223 marking and pin assignment schematic diagram ? advanced mosfet process technology ? specia l designed for dc - dc and dc - ac converters , load switching and general purpose applications ? ultra low on - resistance with low gate charge ? fast switching and reverse body recovery ? 1 75 operating temperature it utilizes the latest processing techniques t o ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in dc - dc and dc - ac converters and a wide variety of other app lications . SSF6072G5 SSF6072G5 6072
ssf 60 72g5 ? silikron semiconductor co.,ltd . 201 2 . 11 . 1 3 version : 1. 1 page 2 of 8 www.silikron.com electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v (br)dss drain - to - source breakdown voltage 60 v v gs = 0v, id = 250a r ds(on) static drain - to - source on - resistance 67 100 m v gs =10v,i d = 1.5 a 76 115 v gs = 5 v,i d = 1.5 a v gs(th) gate threshold voltage 1 2.5 v v ds = v gs , i d = 250 a i dss drain - to - source leakage current 1 a v ds = 60 v,v gs = 0v 1 0 t j = 125 c i gss gate - to - source forward leakage 1 00 na v gs = 20 v - 1 00 v gs = - 20 v gfs forward transconductance 1 s v ds = 15 v i d = 1.5 a q g total gate charge 12 nc i d = 4 a , v ds = 40 v, v gs = 10 v q gs gate - to - source charge 3.5 q gd gate - to - drain("miller") charge 3.7 t d(on) turn - on delay time 9.2 ns v gs = 10 v, vds= 2 5 v, r gen = 50 i d = 1.2 a , t r rise time 16.7 t d(off) turn - off delay time 35 .4 t f fall time 8.6 c iss input capacitance 582 pf v gs = 0v v ds = 30 v ? = 1m hz c oss output capacitance 49 c rss reverse transfer capacitance 3 6 source - drain ratings and characteristics symbol parameter min. typ. max . uni ts conditions i s continuous source current (body diode) 4 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 16 a v sd diode forward voltage 1. 5 v i s = 4 a, v gs =0v
ssf 60 72g5 ? silikron semiconductor co.,ltd . 201 2 . 11 . 1 3 version : 1. 1 page 3 of 8 www.silikron.com test circu its and waveforms switch waveforms: notes : the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - ambient thermal resistance. the value of r j a is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ssf 60 72g5 ? silikron semiconductor co.,ltd . 201 2 . 11 . 1 3 version : 1. 1 page 4 of 8 www.silikron.com t ypical electrical and th ermal characteristics figure 2. gate to source cut - off voltage figure 1: typical capacitance vs. drain - to - source voltage fig ure 3. drain - to - source breakdown voltage v s. case tem perature figure 4: normalized on - resistance vs. case temperature
ssf 60 72g5 ? silikron semiconductor co.,ltd . 201 2 . 11 . 1 3 version : 1. 1 page 5 of 8 www.silikron.com fig ure 5 . maximum drain current vs. case temperature case temperature t ypical electrical and thermal characteristics fig ure 6 . maximum effective transient thermal impedance, junction - to - case
ssf 60 72g5 ? silikron semiconductor co.,ltd . 201 2 . 11 . 1 3 version : 1. 1 page 6 of 8 www.silikron.com mechanical data sot - 223 dimensions in millimet ers (unit: mm) n otes dimensions are inclusive of plating package body sizes exclude mold flash and gate burrs. mold flash at the non - lead sides should be less than 6 mils. dimension l is measured in gauge plane. controlling dimensi on is millimeter, converted inch dimensions are not necessarily exact.
ssf 60 72g5 ? silikron semiconductor co.,ltd . 201 2 . 11 . 1 3 version : 1. 1 page 7 of 8 www.silikron.com ordering and marking information device marking: ssf 6072 g5 package (available) sot - 223 operating temperature range c : - 55 to 1 75 oc devices per unit package type units/ tube tube s/ inner box units/ inner box inner boxes/ carton box units/ carton box s ot - 223 25 00pcs 2 pcs 5 000pcs 8 pcs 4 0000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 or 1 50 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =1 25 or 1 50 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 60 72g5 ? silikron semiconductor co.,ltd . 201 2 . 11 . 1 3 version : 1. 1 page 8 of 8 www.silikron.com attention: any and all silikron pro ducts described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably e xp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accident s or events t hat could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or tran smitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (incl uding circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringem ents of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delive ry specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@silik ron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. building 11a suchun industrial square, 428# xinglong street, suzhou p.r. chin a tel: (86 - 512) 62560688 fax: (86 - 512) 65160705 e - mail: sales@silikron.com
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